When intermetal oxide film which contains much water deposited on MOSFET, degradation of hot carrier characteristics is enhanced. This mechanism is considered to be as follows. During the annealing process water is desorbed from the intermetal oxide. The desorbed water reaches the MOSFET and eventually hydrogens terminate silicon dangling bonds in the gate oxide. This paper describes a new approach which uses ESR to analyze this mechanism. The ESR measurement of number of the silicon dangling bonds in undoped polysilicon lying under the intermetal oxide shows that water diffuses from intermetal oxide to MOSFET during the annealing process. The water diffusion is blocked by introduction between the polysilicon and the intermetal oxides of P-SiN layer or CVD SiO2 damaged by implantation.