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Risako UENO Hiroto HONDA Honam KWON Koichi ISHII Masako OGATA Hitoshi YAGI Ikuo FUJIWARA Kazuhiro SUZUKI Keita SASAKI Hideyuki FUNAKI
We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.