Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.