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[Author] Seiji SAMUKAWA(1hit)

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  • Damage Caused by Stored Charge during ECR Plasma Etching

    Seiji SAMUKAWA  

     
    LETTER-LSI Technology

      Vol:
    E72-E No:4
      Page(s):
    315-317

    Leakage current shift of CMOS inverter circuits due to stored charge during Electron Cyclotron Resonance (ECR) plasma exposure was smaller than Reactive Ion Etching (RIE). But in case applied RF power is turned off at the same time of microwave power off, gate insulator breaks down. Also, electrostatic chuck cooling (ESC cooling) for cooling wafer makes stored charge larger.