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Tomomi YOSHIMOTO Shawn G. THOMAS Kang L. WANG Bahram JALALI
A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) passive waveguide is demonstrated. The absorption layer of the detector consisits of alternating layers of 66 Ge0. 44Si0. 56 and 480 Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0. 2 A/W at 1. 3 µm wavelength.