A nonlinear Volterra-series analysis of multiple ion-implanted GaAs FETs is given that relates carrier profile parameters of ion-implantation to nonlinear rf characteristics of a FET. Expressions for nonlinear coefficients of transconductance are derived from drain current-voltage characteristics of a multiple ion-implanted FET. Nonlinear transfer functions (NLTFs) are then obtained using Volterra series approach. Using these NLTFs third-order intermodulation distortion and power gain are explicitly given. A good agreement has been found between the calculation and the measurement for a medium power GaAs FET with a total gate width of 800 µm operated at 10-dB back off, verifying the usefulness of the present analysis.