A 0.35 µm CMOS process for low-voltage, high-performance applications implemented in an ultra-thin-film SIMOX wafer: Shallow SIMOX, is described. Fully Depleted CMOS devices are realized in a 50 nm thick top Si film. Stable high speed, low-Vth transistors for low-voltage operation were developed by integrating a salicided dual gate process. Short-channel effects are suppressed by a novel channel-drain profile engineering. Low power consumption is achieved by the reduced diffusion capacitance of the SIMOX device and a thick, CMP planarized, intermetal dielectric to reduce metal interconnect capacitance's. Compared with the Bulk-Si CMOS devices, a factor of 1/5 reduction on power dissipation is achieved with this technology. A high ESD strength of 4 kV (HBM) demonstrates the applicability of this technology in advanced high-performance products.