A new GaAs monolithic negative feedback amplifier using a dual-gate MESFET for A.G.C. function has been developed. Such a low NF value as 1.8 to 2.5 dB with a gain of 10 to 12 dB over a frequency range of 50 to 2,000 MHz has been obtained. The gain reduction of about 30 dB was achieved over the same frequency range by means of the second-gate bias. A comparison of the performance between negative feedback amplifiers using a dual-gate FET and a single-gate FET is also discussed.