1-2hit |
Sumihisa HASHIGUCHI Tsuyoshi KOIKE Hideki OHKUBO
The gate-bias dependence of the noise spectrum of GaAs MESFET was investigated. A variation in the slope of the noise spectrum was observed with the increase of the gate-bias voltage. The contributions of the 1/ noise and white noise were determined.
Sumihisa HASHIGUCHI Naofumi HOSHI
The threshold sensitivity for the contact-free detection is improved by utilizing a dual carrier configuration. Reduction of the ambient temperature fluctuation down to 0.1 degree rms per 1 Hz. bandwidth is enough for the detection of the relative resistance fluctuation down to one part in 1012.