A 1/2 frequency divider using resonant-tunneling hot electron transistors (RHETs) has been proposed and demonstrated. The circuit make the best use of negative differential conductance, a feature of RHETs, and contains one half transistors than used in conventional circuits. The RHETs were fabricated using self-aligned InGaAs RHETs and WSiN thin-film resistors on a single chip. The RHETs have an i-InGaAlAs/i-InGaAs collector barrier that improves the current gain at low collector-base voltages. Circuit operation was confirmed at 77 K.