This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.