A fully integrated Low Dropout (LDO), low quiescent current regulator has been fabricated in a 0.6 µm CMOS technology. It is stable with low and high effective series resistance (ESR) capacitors. A dynamic feedback (DNFB) bias technique is used to bias the error amplifier in the LDO such that good current efficiency is achieved while maintaining a good transient response. In order to compare the performance of the LDO regulators with and without dynamic feedback, the error amplifiers are configured to have a large bias current (LC), a small bias current (SC) and a bias with dynamic feedback current using switches. The measurement results show that DNFB's line and load regulations are 0.145%/V and 11 ppm/mA, respectively. Besides, there is about 33% reduction in settling time and voltage drop compared with SC LDO when load current is switching from 0 mA to 50 mA. In order to reduce the dropout voltage, a dropout reduction circuitry based on DNFB is also designed to reduce the threshold voltage of LDO's output PMOS. The measured dropout reduction is 8.1 mV which can be further reduced by a larger feedback ratio in DNFB. The quiescent current of this LDO is measured to be 59.4 µ A and this LDO can provide a maximum output current of 250 mA at an input voltage of 3.6 V. The active area of this LDO is 760 µ m 714 µ m.

A lithium-ion (Li-ion) battery protection IC with an average current of 0.99 µA (at a battery voltage of 3.6 V) and a standby current (after detecting over-discharge) less than 0.01 µA is presented. This low power performance is achieved via a power-on duty-cycle technique. The protection circuit samples the voltage of the battery periodically and powers down during the rest of time. This Li-ion battery protector provides over-charge, over-discharge, excess-current and short circuits protection. This protection IC was implemented in a 0.6-µm CMOS technology and the active area is 880 µm 780 µm.