This paper presents a new piecewise-linear dc model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The performance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-l and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of VGS, VGD and VSB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.