We present the effects of N2O plasma treatment for hot carrier reliability and gate oxide stability in excimer-laser annealed poly-Si TFTs. N2O plasma treatment between SiO2 and poly-Si suppresses both the reduction in mobility caused by hot carrier stress and the Vth shift caused by gate bias stress. The results of XPS spectra and the energy distribution of the trap state density of stressed TFTs show that the introduction of Si-N bonds plays an important role in poly-Si TFT reliability.