We propose, for the first time, highly reliable flash-type EEPROM cell fabrication using in-situ multiple rapid thermal processing (RTP) technology. In this study, rapid thermal oxynitridation tunnel oxide (RTONO) film formations followed by in-situ arsenic (As)-doped floating-gate polysilicon growth by rapid thermal chemical vapor deposition (RTCVD) technologies are fully utilized. The results show that after 5104 program/erase (P/E) endurance cycles, the conventional cell shows 65% narrowing of the threshold voltage (Vt) window, whereas the RTONO cell indicates narrowing of less than 20%. A large number of nitrogen atoms (1020 atoms/cm3) are confirmed by secondary ion mass spectrometry (SIMS), pile up at the SiO2/Si interface and distribute into bulk SiO2. It is considered that in the RTONO film stable Si-N bonds are formed which minimize electron trap generation as well as the neutral defect density, resulting in lower Vt shifts in P/E stress. In addition, the RTONO film reduces the number of hydrogen atoms because of final N2O oxynitridation. The SIMS data shows that by the in-situ RTCVD process As atoms (91020 atoms/cm3) are incorporated uniformly into 1000--thick film. Moreover, the RTCVD polysilicon film indicates an extremely flat surface. The time-dependent dielectric breakdown (TDDB) characteristics of interpoly oxide-nitride-oxide (ONO) film exhibited no defect-related breakdown and 5 times longer breakdown time as compared to phosphorus-doped polysilicon film. Therefore, the flash-EEPROM cell fabricated has good charge storing capability.