A new type of photodetector called "photosensitive floating field emitter, (PFFE)" has been proposed. The PFFE device combines an n-type cone-shaped triode field emitter with a-Si p-i-n photodiode film. However, a PFFE cannot detect two-dimensional distributions of light intensity. In this paper, we propose a novel structure to overcome the above this problem of the PFFE. The device was fabricated on a silicon-on-sapphire substrate to permit irradiation from the backside. p-n photodiodes were constructed within a field emitters, the n+ region being separated by p+ regions to permit detection of two- dimensional light distributions. The emission current of the PFFE/SOS was found to be proportional to the illumination intensity, but the quantum efficiency was only about 2%. This quantum efficiency is lower than that expected. Under irradiation, the emission current increased, but the gate-leakage current increased. This gate-leakage current was several orders of magnitude larger than the emission current. Almost photo-generated electrons lost in the gate electrode.