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Khotimatul FAUZIAH Yuhei SUZUKI Yuki NARITA Yoshinari KAMAKURA Takanobu WATANABE Faiz SALLEH Hiroya IKEDA
In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.
Yuhei SUZUKI Faiz SALLEH Yoshinari KAMAKURA Masaru SHIMOMURA Hiroya IKEDA
The Seebeck coefficient of Si wire co-doped with P and Ga atoms is investigated for applying thermoelectric devices. The observed Seebeck coefficient is closed to the theoretical values of electronic part of Seebeck coefficient due to the electronic transport. From the estimation of phonon scattering processes, it is found that the phonon-drag contribution to the Seebeck coefficient in co-doped Si wire is mainly governed by the phonon-boundary scattering.