This paper proposes an MMIC image rejection mixer and an MMIC balanced mixer employing multilayer microstrip lines and high-electron-mobility-field-effect-transistor (HEMT)s with a LUFET configuration (line-unified HEMT module). The advantage of the mixers is remarkable chip size reduction by the combination of the two technologies. The multilayer microstrip line, in which one microstrip line is placed upon another, is used for stacking passive circuits, e.g. a 90 hybrid and distributed lines, to reduce the chip-area occupied by transmission lines, and to allow flexible line allocation. The line-unified HEMT module provides all functions required for in-phase/out-of-phase power divider/combiners in HEMT electrode and unified coplanar lines configuration. A 29-32 GHz image rejection mixer and a 3-27 GHz balanced mixer are realized in only 1.6 mm 1.0 mm and 1.8 mm 1.2 mm MMIC chip size, respectively.