To implement a wideband bandpass filter with improved skirt-selectivity and out-band characteristics, a new parallel-coupled three-line unit with two short-circuited stubs symmetrically-loaded at the center line is proposed. Unlike most traditional ones, the passband of the proposed parallel-coupled three-line structure is based on the cross-coupling between non-adjacent lines rather than the direct-coupling between adjacent ones, whereas a pair of attenuation poles is found in the stopbands. After revealing its work mechanism, an efficient filter-design-scheme is correspondingly proposed for the presented structure. Firstly, based on a chebyshev-filter synthesis theory, a wideband passband filter consisting of a parallel-coupled two-line and two short-circuited stubs loaded at the input- and output- ports is designed. Furthermore, by putting a properly-designed 3/4-wavelength stepped-impedance resonator (SIR) in between the parallel-coupled two lines, two attenuation poles are then realized at the frequencies very close to the cutoff ones. Accordingly, the roll-off characteristics of the filter are significantly-improved to greater than 100,dB/GHz. Furthermore, two-section open-ended stubs are used to replace the short-circuited ones to realize a pair of extra attenuation poles in stopbands. To validate the proposed techniques, a wideband filter with a bandwidth of 3--5,GHz (Fractional bandwidth (FBW) $= (5,GHz-3,GHz)/4,GHz =50%)$ was designed, simulated, fabricated and measured. The measured responses of the filter agree well with the simulation and theoretical ones, which validates the effectiveness of the newly-proposed three-line unit and the corresponding design scheme.

A Q-enhanced 8th order CMOS active bandpass filter is presented employing a novel two-stage self-calibration technique. The proposed active filter shows the better out-band attenuation performance than other reported CMOS active bandpass filters. The proposed calibration method enables the stable filtering operation affected by neither the input power variation nor the strong interference power. It is fabricated using 65 nm CMOS process. The measured 3 dB bandwidth is 54 MHz at 2.37 GHz. The insertion loss is 2.9 dB and the out-band attenuation is 27.5 dB at 15 MHz offset frequency. The performance of the filter remains unchanged for 5% supply voltage variations.