The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO2 mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO2 mask, c-axis tilts on the mask region at 1 to 10 together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.