Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

Kazumasa HIRAMATSU; Atsushi MOTOGAITO; Hideto MIYAKE; Yoshiaki HONDA; Yasushi IYECHIKA; Takayoshi MAEDA; Frank BERTRAM; Juergen CHRISTEN; Axel HOFFMANN

Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

Kazumasa HIRAMATSU, Atsushi MOTOGAITO, Hideto MIYAKE, Yoshiaki HONDA, Yasushi IYECHIKA, Takayoshi MAEDA, Frank BERTRAM, Juergen CHRISTEN, Axel HOFFMANN

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The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO₂ mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO₂ mask, c-axis tilts on the mask region at 1 to 10 together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.620-626

Publication Date: 2000/04/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Kazumasa HIRAMATSU, Atsushi MOTOGAITO, Hideto MIYAKE, Yoshiaki HONDA, Yasushi IYECHIKA, Takayoshi MAEDA, Frank BERTRAM, Juergen CHRISTEN, Axel HOFFMANN, "Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 620-626, April 2000, doi: .
Abstract: The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO₂ mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO₂ mask, c-axis tilts on the mask region at 1 to 10 together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_620/_p

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@ARTICLE{e83-c_4_620,
author={Kazumasa HIRAMATSU, Atsushi MOTOGAITO, Hideto MIYAKE, Yoshiaki HONDA, Yasushi IYECHIKA, Takayoshi MAEDA, Frank BERTRAM, Juergen CHRISTEN, Axel HOFFMANN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask},
year={2000},
volume={E83-C},
number={4},
pages={620-626},
abstract={The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO₂ mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO₂ mask, c-axis tilts on the mask region at 1 to 10 together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask
T2 - IEICE TRANSACTIONS on Electronics
SP - 620
EP - 626
AU - Kazumasa HIRAMATSU
AU - Atsushi MOTOGAITO
AU - Hideto MIYAKE
AU - Yoshiaki HONDA
AU - Yasushi IYECHIKA
AU - Takayoshi MAEDA
AU - Frank BERTRAM
AU - Juergen CHRISTEN
AU - Axel HOFFMANN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and the crystalline and optical properties are investigated compared with ELO GaN using SiO₂ mask by characterizations of X-ray rocking curve (XRC), transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained. The tilt of c-axis on the W mask in the ELO GaN is not observed, but in the case of the SiO₂ mask, c-axis tilts on the mask region at 1 to 10 together with small angle grain boundaries. Half the way from the ELO interface to the surface, the luminescence becomes excitonic over the whole lateral extension region, which indicates the optically high crystalline quality of the material. On the other hand, different kinds of luminescence are observed depending on the position. The difference of these luminescence is caused by the defects and/or impurity incorporation on the mask region due to the tilting of c-axis.
ER -