With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.

The 22 mechanical optical switch for single mode fiber (SMF) is reported. By using the precision grinding and molding techniques all-plastic multiple-fiber connector, 22 pin-referenced indirect slide switch is developed. The characteristics and the reliability test's results of this optical switch are also reported. Evaluations confirm that the switch has low insertion loss, high-speed switching, stable switching operations and reliability in practical applications.