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Hiroshi YAMAUCHI Yasuyuki WATANABE Masaaki IIZUKA Masakazu NAKAMURA Kazuhiro KUDO
Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.
Yasuyuki WATANABE Hiroyuki IECHI Kazuhiro KUDO
Organic static induction transistors (OSITs) with vertical structure have advantage of lower operational voltage compared to the organic field effect transistors with conventional lateral structure. In this study, OSITs based on pentacene films were applied to fabricate the organic inverters which can operate at low voltage. The experimental results demonstrate that organic inverters based on the OSITs show basic transfer characteristics and a low operational voltage of 2 V.
Shigekazu KUNIYOSHI Masaaki IIZUKA Kazuhiro KUDO Kuniaki TANAKA
We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.