Current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of P3HT/n--silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. The J-V characteristics of the P3HT/n--Si junctions can be explained by a Schottky diode model with an interfacial layer. Diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.78 eV and 3.2, respectively. The C-V analysis suggests that the depletion layer appears in the n--Si layer with a thickness of 1.2 µm from the junction with zero bias and the diffusion potential was estimated at 0.40 eV at the open-circuit condition. The present heterojunction allows a photovoltaic operation with power conversion efficiencies up to 0.38% with a simulated solar light exposure of 100 mW/cm2. The forward bias current was enhanced by coating the Si surface with a SiC layer, where the ideality factor was improved to be the level of 1.451.50.

Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.

Writing/non-writing of composite conducting polymer (polypyrrole/poly(3-hexylthiophene)) have been investigated using composite conducting polymer. Writing has been made in two processes: pretreatment and dropping ethanol. The unipolar signal (10 Vp-p, 10 Hz+5 VDC) has worked as a circuit signal. The conductivity at the path of the composite conducting polymer network has depended on the passed signal. It was confirmed using the Y-type and H-type composite conducting polymer. It has been confirmed that rewriting of composite conducting polymer is possible to develop a memory or a neural network device of conducting polymer.

Carrier mobilities in poly(3-alkylthiphene) cast films have been studied by means of fabricating a field effect transistor (FET) at the field range of (0.4-1.6)104 V/cm. It is found that the regioregurality is markedly effective to the mobilities than the side chain length. The FET mobilility of the regioregular poly(3-hexylthiophene), PHT is approximately 310-3 cm2/Vs which is larger than that of regiorandom PHT by 3 orders of magnitude. The mobility of regioregular poly(3-dodecylthiophene), PDDT is 810-4 cm2/Vs and is also 3 orders of magnitude larger than that of regiorandom PDDT. The mobilities of regioregular ones decrease, however, those of regiorandom ones increase at higher fields. The FET mobilities are nearly same to the mobilities estimated by the time of flight method. These results have been discussed taking the regularity of the main chain and the length of side chain into consideration.

Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10-5 and 2.6 10-4 cm2/V. s before and after the removal of ferric ions, respectively, at a field of 5.0105 V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.