Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)

Shyam S. PANDEY; Wataru TAKASHIMA; Shuichi NAGAMATSU; Keiichi KANETO

Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)

Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO

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Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10^-5 and 2.6 10^-4 cm²/V. s before and after the removal of ferric ions, respectively, at a field of 5.010⁵ V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.7 pp.1088-1093

Publication Date: 2000/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Organic Molecular Electronics for the 21st Century)

Category: Ultra Thin Film

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Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, "Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 7, pp. 1088-1093, July 2000, doi: .
Abstract: Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10^-5 and 2.6 10^-4 cm²/V. s before and after the removal of ferric ions, respectively, at a field of 5.010⁵ V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1088/_p

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@ARTICLE{e83-c_7_1088,
author={Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)},
year={2000},
volume={E83-C},
number={7},
pages={1088-1093},
abstract={Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10^-5 and 2.6 10^-4 cm²/V. s before and after the removal of ferric ions, respectively, at a field of 5.010⁵ V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1088
EP - 1093
AU - Shyam S. PANDEY
AU - Wataru TAKASHIMA
AU - Shuichi NAGAMATSU
AU - Keiichi KANETO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10^-5 and 2.6 10^-4 cm²/V. s before and after the removal of ferric ions, respectively, at a field of 5.010⁵ V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.
ER -