Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4 10-5 and 2.6 10-4 cm2/V. s before and after the removal of ferric ions, respectively, at a field of 5.0105 V/cm. Field dependencies of mobility before and after purification show unique feature and have been discussed in terms of the disorder model.