Triple-layer CoCrPt magnetic thin films with different bias configurations were fabricated by DC magnetron sputtering on CrV and glass substrate. In-plane coercivity (Hc) showed an increase for those films with bias sputtered CoCrPt layer. The in-plane coercivity (Hc) was optimized in NB-B-NB type film prepared with substrate heating at 300C (NB: no bias and B: rf bias applied in sputtering). Better in-plane crystal texture was observed in NB-B-NB type film by XRD and this is believed to be the main reason for the coercivity improvement. The other resource for the coercivity improvement was due to the decoupling of intergrain magnetic interactions. This was discussed accordingly to the results obtained from TEM, MFM and SIMS depth profiling.

256 MbDRAM chips have been fabricated by mix-and-match method using high NA KrF excimer laser stepper and i-line stepper. In the case of KrF stepper, the negative siloxane resist is used for rectangular and wiring patterns and the positive novolak-resin resist is used for hole patterns. Both of these two kinds of resist produce accurate pattern shape, allow-able pattern profile, satisfactory depth of focus and sufficient overlay accuracy for device fabrication in 0.25 µm design rule.