This paper presents an improved gate drive circuit for high power GTO thyristors. The energy-storage/transfer characteristics of an air-core reactor and the fast switching characteristics of FET are employed to make a high gate current of sharp pulse form. The power loss in the gate drive circuit is reduced by using the low resistance and the hysteresis comparator to detect and control the steady on-gate current. The proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments.
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Hirofumi MATSUO, Fujio KUROKAWA, Katsuji IIDA, "An Improved Gate Drive Circuit Using an Air Core Reactor Developed for High Power GTO Thyristors" in IEICE TRANSACTIONS on Communications,
vol. E89-B, no. 1, pp. 196-202, January 2006, doi: 10.1093/ietcom/e89-b.1.196.
Abstract: This paper presents an improved gate drive circuit for high power GTO thyristors. The energy-storage/transfer characteristics of an air-core reactor and the fast switching characteristics of FET are employed to make a high gate current of sharp pulse form. The power loss in the gate drive circuit is reduced by using the low resistance and the hysteresis comparator to detect and control the steady on-gate current. The proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments.
URL: https://global.ieice.org/en_transactions/communications/10.1093/ietcom/e89-b.1.196/_p
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@ARTICLE{e89-b_1_196,
author={Hirofumi MATSUO, Fujio KUROKAWA, Katsuji IIDA, },
journal={IEICE TRANSACTIONS on Communications},
title={An Improved Gate Drive Circuit Using an Air Core Reactor Developed for High Power GTO Thyristors},
year={2006},
volume={E89-B},
number={1},
pages={196-202},
abstract={This paper presents an improved gate drive circuit for high power GTO thyristors. The energy-storage/transfer characteristics of an air-core reactor and the fast switching characteristics of FET are employed to make a high gate current of sharp pulse form. The power loss in the gate drive circuit is reduced by using the low resistance and the hysteresis comparator to detect and control the steady on-gate current. The proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments.},
keywords={},
doi={10.1093/ietcom/e89-b.1.196},
ISSN={1745-1345},
month={January},}
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TY - JOUR
TI - An Improved Gate Drive Circuit Using an Air Core Reactor Developed for High Power GTO Thyristors
T2 - IEICE TRANSACTIONS on Communications
SP - 196
EP - 202
AU - Hirofumi MATSUO
AU - Fujio KUROKAWA
AU - Katsuji IIDA
PY - 2006
DO - 10.1093/ietcom/e89-b.1.196
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E89-B
IS - 1
JA - IEICE TRANSACTIONS on Communications
Y1 - January 2006
AB - This paper presents an improved gate drive circuit for high power GTO thyristors. The energy-storage/transfer characteristics of an air-core reactor and the fast switching characteristics of FET are employed to make a high gate current of sharp pulse form. The power loss in the gate drive circuit is reduced by using the low resistance and the hysteresis comparator to detect and control the steady on-gate current. The proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments.
ER -