IEICE TRANSACTIONS on Communications
Malfunction Issue of SiC-SIT Based DC Circuit Breaker in 400 V DC Power Distribution Systems for Data Centers
Summary :
400 V DC power distribution systems for data centers require a fast response DC circuit breaker is required. The semiconductor DC circuit breaker is an important key technology in DC power distribution systems. This paper considers the malfunction of Silicon Carbide- Static Induction Transistor (SiC-SIT) based DC circuit breakers in 400 V DC power distribution systems for data centers. The malfunction mechanism is explained, and a solution is proposed. Investigations are achieved by MATLAB/Simulink and experimental verification.
- Publication
- IEICE TRANSACTIONS on Communications Vol.E95-B No.6 pp.1990-1996
- Publication Date
- 2012/06/01
- Publicized
- Online ISSN
- 1745-1345
- DOI
- 10.1587/transcom.E95.B.1990
- Type of Manuscript
- PAPER
- Category
- Energy in Electronics Communications
Authors
Keyword
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Seiya ABE, Sihun YANG, Masahito SHOYAMA, Tamotsu NINOMIYA, Akira MATSUMOTO, Akiyoshi FUKUI, "Malfunction Issue of SiC-SIT Based DC Circuit Breaker in 400 V DC Power Distribution Systems for Data Centers" in IEICE TRANSACTIONS on Communications,
vol. E95-B, no. 6, pp. 1990-1996, June 2012, doi: 10.1587/transcom.E95.B.1990.
Abstract: 400 V DC power distribution systems for data centers require a fast response DC circuit breaker is required. The semiconductor DC circuit breaker is an important key technology in DC power distribution systems. This paper considers the malfunction of Silicon Carbide- Static Induction Transistor (SiC-SIT) based DC circuit breakers in 400 V DC power distribution systems for data centers. The malfunction mechanism is explained, and a solution is proposed. Investigations are achieved by MATLAB/Simulink and experimental verification.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.E95.B.1990/_p
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@ARTICLE{e95-b_6_1990,
author={Seiya ABE, Sihun YANG, Masahito SHOYAMA, Tamotsu NINOMIYA, Akira MATSUMOTO, Akiyoshi FUKUI, },
journal={IEICE TRANSACTIONS on Communications},
title={Malfunction Issue of SiC-SIT Based DC Circuit Breaker in 400 V DC Power Distribution Systems for Data Centers},
year={2012},
volume={E95-B},
number={6},
pages={1990-1996},
abstract={400 V DC power distribution systems for data centers require a fast response DC circuit breaker is required. The semiconductor DC circuit breaker is an important key technology in DC power distribution systems. This paper considers the malfunction of Silicon Carbide- Static Induction Transistor (SiC-SIT) based DC circuit breakers in 400 V DC power distribution systems for data centers. The malfunction mechanism is explained, and a solution is proposed. Investigations are achieved by MATLAB/Simulink and experimental verification.},
keywords={},
doi={10.1587/transcom.E95.B.1990},
ISSN={1745-1345},
month={June},}
Copy
TY - JOUR
TI - Malfunction Issue of SiC-SIT Based DC Circuit Breaker in 400 V DC Power Distribution Systems for Data Centers
T2 - IEICE TRANSACTIONS on Communications
SP - 1990
EP - 1996
AU - Seiya ABE
AU - Sihun YANG
AU - Masahito SHOYAMA
AU - Tamotsu NINOMIYA
AU - Akira MATSUMOTO
AU - Akiyoshi FUKUI
PY - 2012
DO - 10.1587/transcom.E95.B.1990
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E95-B
IS - 6
JA - IEICE TRANSACTIONS on Communications
Y1 - June 2012
AB - 400 V DC power distribution systems for data centers require a fast response DC circuit breaker is required. The semiconductor DC circuit breaker is an important key technology in DC power distribution systems. This paper considers the malfunction of Silicon Carbide- Static Induction Transistor (SiC-SIT) based DC circuit breakers in 400 V DC power distribution systems for data centers. The malfunction mechanism is explained, and a solution is proposed. Investigations are achieved by MATLAB/Simulink and experimental verification.
ER -
English
