IEICE TRANSACTIONS on Electronics
Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches
Summary :
A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.11 pp.2141-2149
- Publication Date
- 2005/11/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.11.2141
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Keyword
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Atsushi FUKUDA, Hiroshi OKAZAKI, Tetsuo HIROTA, Yasushi YAMAO, "Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 11, pp. 2141-2149, November 2005, doi: 10.1093/ietele/e88-c.11.2141.
Abstract: A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.11.2141/_p
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@ARTICLE{e88-c_11_2141,
author={Atsushi FUKUDA, Hiroshi OKAZAKI, Tetsuo HIROTA, Yasushi YAMAO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches},
year={2005},
volume={E88-C},
number={11},
pages={2141-2149},
abstract={A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.},
keywords={},
doi={10.1093/ietele/e88-c.11.2141},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches
T2 - IEICE TRANSACTIONS on Electronics
SP - 2141
EP - 2149
AU - Atsushi FUKUDA
AU - Hiroshi OKAZAKI
AU - Tetsuo HIROTA
AU - Yasushi YAMAO
PY - 2005
DO - 10.1093/ietele/e88-c.11.2141
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2005
AB - A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.
ER -
English
