Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure
Summary :
A GaInAs/InP multiple quantum well (MQW)-based wavelength demultiplexer composed of a waveguide array in which the refractive index varies across the array yielded successful results of wavelength demultiplexing and optical deflection. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by the SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), a straight waveguide grating can be formed with reduced optical propagation losses. A straight waveguide array device with a 1.4% refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, for which a wavelength separation with an approximately 25 nm spacing and free spectral range (FSR) of approximately 100 nm were obtained. Moreover, an optical deflector was investigated and primitive deflection was achieved at 1460 and 1490 nm incident wavelengths.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.1013-1019
- Publication Date
- 2005/05/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.5.1013
- Type of Manuscript
- Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
- Category
- Optical Passive Devices and Modules
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Yasumasa KAWAKITA, Suguru SHIMOTAYA, Daisuke MACHIDA, Kazuhiko SHIMOMURA, "Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 5, pp. 1013-1019, May 2005, doi: 10.1093/ietele/e88-c.5.1013.
Abstract: A GaInAs/InP multiple quantum well (MQW)-based wavelength demultiplexer composed of a waveguide array in which the refractive index varies across the array yielded successful results of wavelength demultiplexing and optical deflection. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by the SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), a straight waveguide grating can be formed with reduced optical propagation losses. A straight waveguide array device with a 1.4% refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, for which a wavelength separation with an approximately 25 nm spacing and free spectral range (FSR) of approximately 100 nm were obtained. Moreover, an optical deflector was investigated and primitive deflection was achieved at 1460 and 1490 nm incident wavelengths.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.1013/_p
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@ARTICLE{e88-c_5_1013,
author={Yasumasa KAWAKITA, Suguru SHIMOTAYA, Daisuke MACHIDA, Kazuhiko SHIMOMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure},
year={2005},
volume={E88-C},
number={5},
pages={1013-1019},
abstract={A GaInAs/InP multiple quantum well (MQW)-based wavelength demultiplexer composed of a waveguide array in which the refractive index varies across the array yielded successful results of wavelength demultiplexing and optical deflection. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by the SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), a straight waveguide grating can be formed with reduced optical propagation losses. A straight waveguide array device with a 1.4% refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, for which a wavelength separation with an approximately 25 nm spacing and free spectral range (FSR) of approximately 100 nm were obtained. Moreover, an optical deflector was investigated and primitive deflection was achieved at 1460 and 1490 nm incident wavelengths.},
keywords={},
doi={10.1093/ietele/e88-c.5.1013},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 1013
EP - 1019
AU - Yasumasa KAWAKITA
AU - Suguru SHIMOTAYA
AU - Daisuke MACHIDA
AU - Kazuhiko SHIMOMURA
PY - 2005
DO - 10.1093/ietele/e88-c.5.1013
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - A GaInAs/InP multiple quantum well (MQW)-based wavelength demultiplexer composed of a waveguide array in which the refractive index varies across the array yielded successful results of wavelength demultiplexing and optical deflection. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by the SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), a straight waveguide grating can be formed with reduced optical propagation losses. A straight waveguide array device with a 1.4% refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, for which a wavelength separation with an approximately 25 nm spacing and free spectral range (FSR) of approximately 100 nm were obtained. Moreover, an optical deflector was investigated and primitive deflection was achieved at 1460 and 1490 nm incident wavelengths.
ER -
English
