Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique
Summary :
Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, F min, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y21 and suppression of an increase of noise spectral density, the device with an n+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.7 pp.1509-1515
- Publication Date
- 2005/07/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.7.1509
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
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Masahiro NAKAYAMA, Shinichi NARITA, Hiroki I. FUJISHIRO, "Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 7, pp. 1509-1515, July 2005, doi: 10.1093/ietele/e88-c.7.1509.
Abstract: Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, F min, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y21 and suppression of an increase of noise spectral density, the device with an n+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.7.1509/_p
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@ARTICLE{e88-c_7_1509,
author={Masahiro NAKAYAMA, Shinichi NARITA, Hiroki I. FUJISHIRO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique},
year={2005},
volume={E88-C},
number={7},
pages={1509-1515},
abstract={Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, F min, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y21 and suppression of an increase of noise spectral density, the device with an n+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.},
keywords={},
doi={10.1093/ietele/e88-c.7.1509},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 1509
EP - 1515
AU - Masahiro NAKAYAMA
AU - Shinichi NARITA
AU - Hiroki I. FUJISHIRO
PY - 2005
DO - 10.1093/ietele/e88-c.7.1509
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2005
AB - Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, F min, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y21 and suppression of an increase of noise spectral density, the device with an n+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.
ER -
English
