To clarify the correspondence between Shielding Effectiveness (SE) of shielding materials and their physical property, we propose an equivalent circuit for a shielding effectiveness test apparatus using a dual TEM cell, and show its validity. By considering the structure of dual TEM cell that consists of a pair of cells coupled via an aperture in their common wall, we defined the capacitance C and mutual inductance M, that respectively express the electric coupling and magnetic coupling between two center conductors. By the measurement of unloaded S-parameter, we determined the values of C and M for a dual TEM cell in hand. Next, the shielding material was approximated by the apparent sheet resistivity Rs, and was used in the equivalent circuit of loaded aperture. As a result, the coupling level calculated from the equivalent circuit agreed well with the measured data in frequencies below 300 MHz.
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Atsuhiro NISHIKATA, Ryusuke SAITO, Yukio YAMANAKA, "Low Frequency Equivalent Circuit of Dual TEM Cell for Shielding Material Measurement" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 1, pp. 44-50, January 2006, doi: 10.1093/ietele/e89-c.1.44.
Abstract: To clarify the correspondence between Shielding Effectiveness (SE) of shielding materials and their physical property, we propose an equivalent circuit for a shielding effectiveness test apparatus using a dual TEM cell, and show its validity. By considering the structure of dual TEM cell that consists of a pair of cells coupled via an aperture in their common wall, we defined the capacitance C and mutual inductance M, that respectively express the electric coupling and magnetic coupling between two center conductors. By the measurement of unloaded S-parameter, we determined the values of C and M for a dual TEM cell in hand. Next, the shielding material was approximated by the apparent sheet resistivity Rs, and was used in the equivalent circuit of loaded aperture. As a result, the coupling level calculated from the equivalent circuit agreed well with the measured data in frequencies below 300 MHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.1.44/_p
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@ARTICLE{e89-c_1_44,
author={Atsuhiro NISHIKATA, Ryusuke SAITO, Yukio YAMANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Frequency Equivalent Circuit of Dual TEM Cell for Shielding Material Measurement},
year={2006},
volume={E89-C},
number={1},
pages={44-50},
abstract={To clarify the correspondence between Shielding Effectiveness (SE) of shielding materials and their physical property, we propose an equivalent circuit for a shielding effectiveness test apparatus using a dual TEM cell, and show its validity. By considering the structure of dual TEM cell that consists of a pair of cells coupled via an aperture in their common wall, we defined the capacitance C and mutual inductance M, that respectively express the electric coupling and magnetic coupling between two center conductors. By the measurement of unloaded S-parameter, we determined the values of C and M for a dual TEM cell in hand. Next, the shielding material was approximated by the apparent sheet resistivity Rs, and was used in the equivalent circuit of loaded aperture. As a result, the coupling level calculated from the equivalent circuit agreed well with the measured data in frequencies below 300 MHz.},
keywords={},
doi={10.1093/ietele/e89-c.1.44},
ISSN={1745-1353},
month={January},}
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TY - JOUR
TI - Low Frequency Equivalent Circuit of Dual TEM Cell for Shielding Material Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 44
EP - 50
AU - Atsuhiro NISHIKATA
AU - Ryusuke SAITO
AU - Yukio YAMANAKA
PY - 2006
DO - 10.1093/ietele/e89-c.1.44
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2006
AB - To clarify the correspondence between Shielding Effectiveness (SE) of shielding materials and their physical property, we propose an equivalent circuit for a shielding effectiveness test apparatus using a dual TEM cell, and show its validity. By considering the structure of dual TEM cell that consists of a pair of cells coupled via an aperture in their common wall, we defined the capacitance C and mutual inductance M, that respectively express the electric coupling and magnetic coupling between two center conductors. By the measurement of unloaded S-parameter, we determined the values of C and M for a dual TEM cell in hand. Next, the shielding material was approximated by the apparent sheet resistivity Rs, and was used in the equivalent circuit of loaded aperture. As a result, the coupling level calculated from the equivalent circuit agreed well with the measured data in frequencies below 300 MHz.
ER -