IEICE TRANSACTIONS on Electronics
Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model
Summary :
To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage Vds is lower than the saturated voltage. The Ids-Vds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of Ids-Vds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.12 pp.1760-1764
- Publication Date
- 2006/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.12.1760
- Type of Manuscript
- Special Section PAPER (Special Section on Towards the Realization of Organic Molecular Electronics)
- Category
- Organic Molecular Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Ryosuke TAMURA, Eunju LIM, Takaaki MANAKA, Mitsumasa IWAMOTO, "Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 12, pp. 1760-1764, December 2006, doi: 10.1093/ietele/e89-c.12.1760.
Abstract: To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage Vds is lower than the saturated voltage. The Ids-Vds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of Ids-Vds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.12.1760/_p
Copy
@ARTICLE{e89-c_12_1760,
author={Ryosuke TAMURA, Eunju LIM, Takaaki MANAKA, Mitsumasa IWAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model},
year={2006},
volume={E89-C},
number={12},
pages={1760-1764},
abstract={To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage Vds is lower than the saturated voltage. The Ids-Vds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of Ids-Vds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.},
keywords={},
doi={10.1093/ietele/e89-c.12.1760},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1760
EP - 1764
AU - Ryosuke TAMURA
AU - Eunju LIM
AU - Takaaki MANAKA
AU - Mitsumasa IWAMOTO
PY - 2006
DO - 10.1093/ietele/e89-c.12.1760
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2006
AB - To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage Vds is lower than the saturated voltage. The Ids-Vds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of Ids-Vds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.
ER -
English
