IEICE TRANSACTIONS on Electronics
Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE
Summary :
We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.1068-1079
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.1068
- Type of Manuscript
- PAPER
- Category
- Lasers, Quantum Electronics
Authors
Keyword
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Xueliang SONG, Naoki FUTAKUCHI, Daisuke MIYASHITA, Foo Cheong YIT, Yoshiaki NAKANO, "Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 1068-1079, July 2006, doi: 10.1093/ietele/e89-c.7.1068.
Abstract: We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.1068/_p
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@ARTICLE{e89-c_7_1068,
author={Xueliang SONG, Naoki FUTAKUCHI, Daisuke MIYASHITA, Foo Cheong YIT, Yoshiaki NAKANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE},
year={2006},
volume={E89-C},
number={7},
pages={1068-1079},
abstract={We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.},
keywords={},
doi={10.1093/ietele/e89-c.7.1068},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE
T2 - IEICE TRANSACTIONS on Electronics
SP - 1068
EP - 1079
AU - Xueliang SONG
AU - Naoki FUTAKUCHI
AU - Daisuke MIYASHITA
AU - Foo Cheong YIT
AU - Yoshiaki NAKANO
PY - 2006
DO - 10.1093/ietele/e89-c.7.1068
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
ER -
English
