Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Summary :
Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of frequency of operation of GaN-based high-electron-mobility transistors (HEMTs). The experimental data on noise temperature of hot electrons at a microwave frequency as a function of supplied electric power is used to extract information on hot phonons: the hot-phonon lifetime, the equivalent hot-phonon temperature, the effective occupancy of hot-phonon states involved into electron-LO-phonon interaction. The possible ways for controlling the hot-phonon effect on electron drift velocity through variation of electron density, channel composition, and hot-phonon lifetime are discussed. The expected dependence of hot-electron drift velocity on hot-phonon lifetime is confirmed experimentally. A self-consistent explanation of different frequency behaviour of InP-based and GaN-based HEMTs is obtained from a comparative study of hot-phonon effects.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.913-920
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.913
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
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Arvydas MATULIONIS, "Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 913-920, July 2006, doi: 10.1093/ietele/e89-c.7.913.
Abstract: Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of frequency of operation of GaN-based high-electron-mobility transistors (HEMTs). The experimental data on noise temperature of hot electrons at a microwave frequency as a function of supplied electric power is used to extract information on hot phonons: the hot-phonon lifetime, the equivalent hot-phonon temperature, the effective occupancy of hot-phonon states involved into electron-LO-phonon interaction. The possible ways for controlling the hot-phonon effect on electron drift velocity through variation of electron density, channel composition, and hot-phonon lifetime are discussed. The expected dependence of hot-electron drift velocity on hot-phonon lifetime is confirmed experimentally. A self-consistent explanation of different frequency behaviour of InP-based and GaN-based HEMTs is obtained from a comparative study of hot-phonon effects.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.913/_p
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@ARTICLE{e89-c_7_913,
author={Arvydas MATULIONIS, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs},
year={2006},
volume={E89-C},
number={7},
pages={913-920},
abstract={Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of frequency of operation of GaN-based high-electron-mobility transistors (HEMTs). The experimental data on noise temperature of hot electrons at a microwave frequency as a function of supplied electric power is used to extract information on hot phonons: the hot-phonon lifetime, the equivalent hot-phonon temperature, the effective occupancy of hot-phonon states involved into electron-LO-phonon interaction. The possible ways for controlling the hot-phonon effect on electron drift velocity through variation of electron density, channel composition, and hot-phonon lifetime are discussed. The expected dependence of hot-electron drift velocity on hot-phonon lifetime is confirmed experimentally. A self-consistent explanation of different frequency behaviour of InP-based and GaN-based HEMTs is obtained from a comparative study of hot-phonon effects.},
keywords={},
doi={10.1093/ietele/e89-c.7.913},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 913
EP - 920
AU - Arvydas MATULIONIS
PY - 2006
DO - 10.1093/ietele/e89-c.7.913
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of frequency of operation of GaN-based high-electron-mobility transistors (HEMTs). The experimental data on noise temperature of hot electrons at a microwave frequency as a function of supplied electric power is used to extract information on hot phonons: the hot-phonon lifetime, the equivalent hot-phonon temperature, the effective occupancy of hot-phonon states involved into electron-LO-phonon interaction. The possible ways for controlling the hot-phonon effect on electron drift velocity through variation of electron density, channel composition, and hot-phonon lifetime are discussed. The expected dependence of hot-electron drift velocity on hot-phonon lifetime is confirmed experimentally. A self-consistent explanation of different frequency behaviour of InP-based and GaN-based HEMTs is obtained from a comparative study of hot-phonon effects.
ER -
English
