IEICE TRANSACTIONS on Electronics
Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors
Wojciech KNAP, Jerzy 
USAKOWSKI, Frederic TEPPE, Nina DYAKONOVA, Abdelouahad El FATIMY
Summary :
Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.926-930
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.926
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
Authors
USAKOWSKIKeyword
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Wojciech KNAP, Jerzy USAKOWSKI, Frederic TEPPE, Nina DYAKONOVA, Abdelouahad El FATIMY, "Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 926-930, July 2006, doi: 10.1093/ietele/e89-c.7.926.
Abstract: Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.926/_p
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@ARTICLE{e89-c_7_926,
author={Wojciech KNAP, Jerzy USAKOWSKI, Frederic TEPPE, Nina DYAKONOVA, Abdelouahad El FATIMY, },
journal={IEICE TRANSACTIONS on Electronics},
title={Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors},
year={2006},
volume={E89-C},
number={7},
pages={926-930},
abstract={Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.},
keywords={},
doi={10.1093/ietele/e89-c.7.926},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 926
EP - 930
AU - Wojciech KNAP
AU - Jerzy USAKOWSKI
AU - Frederic TEPPE
AU - Nina DYAKONOVA
AU - Abdelouahad El FATIMY
PY - 2006
DO - 10.1093/ietele/e89-c.7.926
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.
ER -
English
