IEICE TRANSACTIONS on Electronics
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications
Summary :
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) values of 265 and 305 GHz, respectively, and a breakdown voltage (BVCEo) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for ≥ 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.931-936
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.931
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- High-Speed HBTs and ICs
Authors
Rachid DRIAD
Robert E. MAKON
Karl SCHNEIDER
Ulrich NOWOTNY
Rolf AIDAM
Rudiger QUAY
Michael SCHLECHTWEG
Michael MIKULLA
Gunter WEIMANN
Keyword
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Rachid DRIAD, Robert E. MAKON, Karl SCHNEIDER, Ulrich NOWOTNY, Rolf AIDAM, Rudiger QUAY, Michael SCHLECHTWEG, Michael MIKULLA, Gunter WEIMANN, "InP DHBT Based IC Technology for over 80 Gbit/s Data Communications" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 931-936, July 2006, doi: 10.1093/ietele/e89-c.7.931.
Abstract: In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) values of 265 and 305 GHz, respectively, and a breakdown voltage (BVCEo) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for ≥ 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.931/_p
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@ARTICLE{e89-c_7_931,
author={Rachid DRIAD, Robert E. MAKON, Karl SCHNEIDER, Ulrich NOWOTNY, Rolf AIDAM, Rudiger QUAY, Michael SCHLECHTWEG, Michael MIKULLA, Gunter WEIMANN, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP DHBT Based IC Technology for over 80 Gbit/s Data Communications},
year={2006},
volume={E89-C},
number={7},
pages={931-936},
abstract={In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) values of 265 and 305 GHz, respectively, and a breakdown voltage (BVCEo) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for ≥ 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.},
keywords={},
doi={10.1093/ietele/e89-c.7.931},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - InP DHBT Based IC Technology for over 80 Gbit/s Data Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 931
EP - 936
AU - Rachid DRIAD
AU - Robert E. MAKON
AU - Karl SCHNEIDER
AU - Ulrich NOWOTNY
AU - Rolf AIDAM
AU - Rudiger QUAY
AU - Michael SCHLECHTWEG
AU - Michael MIKULLA
AU - Gunter WEIMANN
PY - 2006
DO - 10.1093/ietele/e89-c.7.931
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) values of 265 and 305 GHz, respectively, and a breakdown voltage (BVCEo) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for ≥ 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.
ER -
English
