Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
Summary :
Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.965-971
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.965
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- THz Devices
Authors
Keyword
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Masahiro ASADA, Naoyuki ORIHASHI, Safumi SUZUKI, "Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 965-971, July 2006, doi: 10.1093/ietele/e89-c.7.965.
Abstract: Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.965/_p
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@ARTICLE{e89-c_7_965,
author={Masahiro ASADA, Naoyuki ORIHASHI, Safumi SUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes},
year={2006},
volume={E89-C},
number={7},
pages={965-971},
abstract={Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.},
keywords={},
doi={10.1093/ietele/e89-c.7.965},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 965
EP - 971
AU - Masahiro ASADA
AU - Naoyuki ORIHASHI
AU - Safumi SUZUKI
PY - 2006
DO - 10.1093/ietele/e89-c.7.965
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
ER -
English
