Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation

Youhei OOKAWA; Shigeru KISHIMOTO; Koichi MAEZAWA; Takashi MIZUTANI

doi:10.1093/ietele/e89-c.7.999

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation

Youhei OOKAWA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI

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A novel resonant tunneling diode (RTD) oscillator is proposed, which overcomes the problems of the conventional RTD oscillators, such as the low-frequency spurious oscillation and the bias instability. Our proposal consists of two RTDs connected serially, and the resonator connected to the node between two RTDs. This circuit separates the oscillation node from the bias nodes, and suppresses the above mentioned problems. This relaxes the severe restriction on the RTD area, and makes it possible to supply higher power to a load. Circuit simulation shows that with this circuit more than 2 mW power can be supplied to the 50 Ω resistive load at 100 GHz using RTDs having 10⁵ A/cm²-peak current density and 20 µm²-area. It also shows that the dc-to-RF conversion efficiency is as good as that of conventional ones. Furthermore, we have studied the extension of this oscillator having 4 RTDs connected serially. Circuit simulations revealed that using this circuit the power can be doubled with a good conversion efficiency.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.999-1004

Publication Date: 2006/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.7.999

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)

Category: THz Devices

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Youhei OOKAWA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI, "Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 7, pp. 999-1004, July 2006, doi: 10.1093/ietele/e89-c.7.999.
Abstract: A novel resonant tunneling diode (RTD) oscillator is proposed, which overcomes the problems of the conventional RTD oscillators, such as the low-frequency spurious oscillation and the bias instability. Our proposal consists of two RTDs connected serially, and the resonator connected to the node between two RTDs. This circuit separates the oscillation node from the bias nodes, and suppresses the above mentioned problems. This relaxes the severe restriction on the RTD area, and makes it possible to supply higher power to a load. Circuit simulation shows that with this circuit more than 2 mW power can be supplied to the 50 Ω resistive load at 100 GHz using RTDs having 10⁵ A/cm²-peak current density and 20 µm²-area. It also shows that the dc-to-RF conversion efficiency is as good as that of conventional ones. Furthermore, we have studied the extension of this oscillator having 4 RTDs connected serially. Circuit simulations revealed that using this circuit the power can be doubled with a good conversion efficiency.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.999/_p

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@ARTICLE{e89-c_7_999,
author={Youhei OOKAWA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation},
year={2006},
volume={E89-C},
number={7},
pages={999-1004},
abstract={A novel resonant tunneling diode (RTD) oscillator is proposed, which overcomes the problems of the conventional RTD oscillators, such as the low-frequency spurious oscillation and the bias instability. Our proposal consists of two RTDs connected serially, and the resonator connected to the node between two RTDs. This circuit separates the oscillation node from the bias nodes, and suppresses the above mentioned problems. This relaxes the severe restriction on the RTD area, and makes it possible to supply higher power to a load. Circuit simulation shows that with this circuit more than 2 mW power can be supplied to the 50 Ω resistive load at 100 GHz using RTDs having 10⁵ A/cm²-peak current density and 20 µm²-area. It also shows that the dc-to-RF conversion efficiency is as good as that of conventional ones. Furthermore, we have studied the extension of this oscillator having 4 RTDs connected serially. Circuit simulations revealed that using this circuit the power can be doubled with a good conversion efficiency.},
keywords={},
doi={10.1093/ietele/e89-c.7.999},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 999
EP - 1004
AU - Youhei OOKAWA
AU - Shigeru KISHIMOTO
AU - Koichi MAEZAWA
AU - Takashi MIZUTANI
PY - 2006
DO - 10.1093/ietele/e89-c.7.999
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - A novel resonant tunneling diode (RTD) oscillator is proposed, which overcomes the problems of the conventional RTD oscillators, such as the low-frequency spurious oscillation and the bias instability. Our proposal consists of two RTDs connected serially, and the resonator connected to the node between two RTDs. This circuit separates the oscillation node from the bias nodes, and suppresses the above mentioned problems. This relaxes the severe restriction on the RTD area, and makes it possible to supply higher power to a load. Circuit simulation shows that with this circuit more than 2 mW power can be supplied to the 50 Ω resistive load at 100 GHz using RTDs having 10⁵ A/cm²-peak current density and 20 µm²-area. It also shows that the dc-to-RF conversion efficiency is as good as that of conventional ones. Furthermore, we have studied the extension of this oscillator having 4 RTDs connected serially. Circuit simulations revealed that using this circuit the power can be doubled with a good conversion efficiency.
ER -