Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch
Summary :
We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)2O9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.9 pp.1368-1372
- Publication Date
- 2006/09/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.9.1368
- Type of Manuscript
- LETTER
- Category
- Integrated Electronics
Authors
Keyword
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Shinzo KOYAMA, Yoshihisa KATO, Takayoshi YAMADA, Yasuhiro SHIMADA, "Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 9, pp. 1368-1372, September 2006, doi: 10.1093/ietele/e89-c.9.1368.
Abstract: We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)2O9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.9.1368/_p
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@ARTICLE{e89-c_9_1368,
author={Shinzo KOYAMA, Yoshihisa KATO, Takayoshi YAMADA, Yasuhiro SHIMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch},
year={2006},
volume={E89-C},
number={9},
pages={1368-1372},
abstract={We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)2O9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.},
keywords={},
doi={10.1093/ietele/e89-c.9.1368},
ISSN={1745-1353},
month={September},}
Copy
TY - JOUR
TI - Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch
T2 - IEICE TRANSACTIONS on Electronics
SP - 1368
EP - 1372
AU - Shinzo KOYAMA
AU - Yoshihisa KATO
AU - Takayoshi YAMADA
AU - Yasuhiro SHIMADA
PY - 2006
DO - 10.1093/ietele/e89-c.9.1368
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2006
AB - We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)2O9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.
ER -
English
