IEICE TRANSACTIONS on Electronics
Low-Temperature Au-to-Au Bonding for LiNbO3/Si Structure Achieved in Ambient Air
Summary :
A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.1 pp.145-146
- Publication Date
- 2007/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.1.145
- Type of Manuscript
- Special Section LETTER (Special Section on Microoptomechatronics)
- Category
- Micro/Nano Fabrication
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Ryo TAKIGAWA, Eiji HIGURASHI, Tadatomo SUGA, Satoshi SHINADA, Tetsuya KAWANISHI, "Low-Temperature Au-to-Au Bonding for LiNbO3/Si Structure Achieved in Ambient Air" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 1, pp. 145-146, January 2007, doi: 10.1093/ietele/e90-c.1.145.
Abstract: A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.1.145/_p
Copy
@ARTICLE{e90-c_1_145,
author={Ryo TAKIGAWA, Eiji HIGURASHI, Tadatomo SUGA, Satoshi SHINADA, Tetsuya KAWANISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Au-to-Au Bonding for LiNbO3/Si Structure Achieved in Ambient Air},
year={2007},
volume={E90-C},
number={1},
pages={145-146},
abstract={A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100
keywords={},
doi={10.1093/ietele/e90-c.1.145},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - Low-Temperature Au-to-Au Bonding for LiNbO3/Si Structure Achieved in Ambient Air
T2 - IEICE TRANSACTIONS on Electronics
SP - 145
EP - 146
AU - Ryo TAKIGAWA
AU - Eiji HIGURASHI
AU - Tadatomo SUGA
AU - Satoshi SHINADA
AU - Tetsuya KAWANISHI
PY - 2007
DO - 10.1093/ietele/e90-c.1.145
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2007
AB - A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100
ER -
English
