A ridge-type Zn-indiffused Mach-Zehnder modulator operating at 1.55 µm wavelength is demonstrated on a z-cut LiNbO3 substrate for the first time. The measured results show that the values of voltage-length product can be reduced from 9.6 V-cm to 8.1 V-cm with the etched depth of 1.7 µm.
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Ruey-Ching TWU, Chia-Chih HUANG, Way-Seen WANG, "Ridge-Type Zn-Indiffused Mach-Zehnder Modulator in LiNbO3" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 2, pp. 481-483, February 2007, doi: 10.1093/ietele/e90-c.2.481.
Abstract: A ridge-type Zn-indiffused Mach-Zehnder modulator operating at 1.55 µm wavelength is demonstrated on a z-cut LiNbO3 substrate for the first time. The measured results show that the values of voltage-length product can be reduced from 9.6 V-cm to 8.1 V-cm with the etched depth of 1.7 µm.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.2.481/_p
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@ARTICLE{e90-c_2_481,
author={Ruey-Ching TWU, Chia-Chih HUANG, Way-Seen WANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ridge-Type Zn-Indiffused Mach-Zehnder Modulator in LiNbO3},
year={2007},
volume={E90-C},
number={2},
pages={481-483},
abstract={A ridge-type Zn-indiffused Mach-Zehnder modulator operating at 1.55 µm wavelength is demonstrated on a z-cut LiNbO3 substrate for the first time. The measured results show that the values of voltage-length product can be reduced from 9.6 V-cm to 8.1 V-cm with the etched depth of 1.7 µm.},
keywords={},
doi={10.1093/ietele/e90-c.2.481},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Ridge-Type Zn-Indiffused Mach-Zehnder Modulator in LiNbO3
T2 - IEICE TRANSACTIONS on Electronics
SP - 481
EP - 483
AU - Ruey-Ching TWU
AU - Chia-Chih HUANG
AU - Way-Seen WANG
PY - 2007
DO - 10.1093/ietele/e90-c.2.481
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2007
AB - A ridge-type Zn-indiffused Mach-Zehnder modulator operating at 1.55 µm wavelength is demonstrated on a z-cut LiNbO3 substrate for the first time. The measured results show that the values of voltage-length product can be reduced from 9.6 V-cm to 8.1 V-cm with the etched depth of 1.7 µm.
ER -