Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network

Yukio TAKAHASHI; Ryo ISHIKAWA; Kazuhiko HONJO

doi:10.1093/ietele/e90-c.9.1658

Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network

Yukio TAKAHASHI, Ryo ISHIKAWA, Kazuhiko HONJO

Full Text Views

0

Cite this

Summary :

Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.9 pp.1658-1663

Publication Date: 2007/09/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.9.1658

Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)

Category: Active Devices/Circuits

Cite this

Copy

Yukio TAKAHASHI, Ryo ISHIKAWA, Kazuhiko HONJO, "Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 9, pp. 1658-1663, September 2007, doi: 10.1093/ietele/e90-c.9.1658.
Abstract: Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.9.1658/_p

Copy

@ARTICLE{e90-c_9_1658,
author={Yukio TAKAHASHI, Ryo ISHIKAWA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network},
year={2007},
volume={E90-C},
number={9},
pages={1658-1663},
abstract={Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.},
keywords={},
doi={10.1093/ietele/e90-c.9.1658},
ISSN={1745-1353},
month={September},}

Copy

TY - JOUR
TI - Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network
T2 - IEICE TRANSACTIONS on Electronics
SP - 1658
EP - 1663
AU - Yukio TAKAHASHI
AU - Ryo ISHIKAWA
AU - Kazuhiko HONJO
PY - 2007
DO - 10.1093/ietele/e90-c.9.1658
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2007
AB - Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.
ER -