The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC
Summary :
The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.3 pp.366-372
- Publication Date
- 2008/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.3.366
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Keyword
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Kiyoyuki IHARA, "The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 3, pp. 366-372, March 2008, doi: 10.1093/ietele/e91-c.3.366.
Abstract: The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.3.366/_p
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@ARTICLE{e91-c_3_366,
author={Kiyoyuki IHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC},
year={2008},
volume={E91-C},
number={3},
pages={366-372},
abstract={The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.},
keywords={},
doi={10.1093/ietele/e91-c.3.366},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC
T2 - IEICE TRANSACTIONS on Electronics
SP - 366
EP - 372
AU - Kiyoyuki IHARA
PY - 2008
DO - 10.1093/ietele/e91-c.3.366
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2008
AB - The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.
ER -
English
