Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro ANDO; Koji UEDA; Mamoru KUMANO; Taizoh SADOH; Kazumasa NARUMI; Yoshihito MAEDA; Masanobu MIYAO

doi:10.1093/ietele/e91-c.5.708

Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro ANDO, Koji UEDA, Mamoru KUMANO, Taizoh SADOH, Kazumasa NARUMI, Yoshihito MAEDA, Masanobu MIYAO

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Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe₃Si/Ge structures. It was found that very small χ_min values (2-3%) were achieved in a wide temperature range of 60-200 under the stoichiometric condition. From TEM observation, it was rvealed that the Fe₃Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe₃Si/Ge structures was guaranteed up to 400. These results suggested that growth at a low temperature (<200) under the stoichiometric condition was essential to obtain high quality Fe₃Si/Ge structures with sharp interfaces.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.708-711

Publication Date: 2008/05/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.5.708

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Yu-ichiro ANDO, Koji UEDA, Mamoru KUMANO, Taizoh SADOH, Kazumasa NARUMI, Yoshihito MAEDA, Masanobu MIYAO, "Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 5, pp. 708-711, May 2008, doi: 10.1093/ietele/e91-c.5.708.
Abstract: Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe₃Si/Ge structures. It was found that very small χ_min values (2-3%) were achieved in a wide temperature range of 60-200 under the stoichiometric condition. From TEM observation, it was rvealed that the Fe₃Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe₃Si/Ge structures was guaranteed up to 400. These results suggested that growth at a low temperature (<200) under the stoichiometric condition was essential to obtain high quality Fe₃Si/Ge structures with sharp interfaces.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.708/_p

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@ARTICLE{e91-c_5_708,
author={Yu-ichiro ANDO, Koji UEDA, Mamoru KUMANO, Taizoh SADOH, Kazumasa NARUMI, Yoshihito MAEDA, Masanobu MIYAO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application},
year={2008},
volume={E91-C},
number={5},
pages={708-711},
abstract={Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe₃Si/Ge structures. It was found that very small χ_min values (2-3%) were achieved in a wide temperature range of 60-200 under the stoichiometric condition. From TEM observation, it was rvealed that the Fe₃Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe₃Si/Ge structures was guaranteed up to 400. These results suggested that growth at a low temperature (<200) under the stoichiometric condition was essential to obtain high quality Fe₃Si/Ge structures with sharp interfaces.},
keywords={},
doi={10.1093/ietele/e91-c.5.708},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 708
EP - 711
AU - Yu-ichiro ANDO
AU - Koji UEDA
AU - Mamoru KUMANO
AU - Taizoh SADOH
AU - Kazumasa NARUMI
AU - Yoshihito MAEDA
AU - Masanobu MIYAO
PY - 2008
DO - 10.1093/ietele/e91-c.5.708
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe₃Si/Ge structures. It was found that very small χ_min values (2-3%) were achieved in a wide temperature range of 60-200 under the stoichiometric condition. From TEM observation, it was rvealed that the Fe₃Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe₃Si/Ge structures was guaranteed up to 400. These results suggested that growth at a low temperature (<200) under the stoichiometric condition was essential to obtain high quality Fe₃Si/Ge structures with sharp interfaces.
ER -