Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS

Seung-Hyun SONG; Jae-Chul KIM; Sung-Woo JUNG; Yoon-Ha JEONG

doi:10.1093/ietele/e91-c.5.761

Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS

Seung-Hyun SONG, Jae-Chul KIM, Sung-Woo JUNG, Yoon-Ha JEONG

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This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.761-766

Publication Date: 2008/05/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.5.761

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Seung-Hyun SONG, Jae-Chul KIM, Sung-Woo JUNG, Yoon-Ha JEONG, "Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 5, pp. 761-766, May 2008, doi: 10.1093/ietele/e91-c.5.761.
Abstract: This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.761/_p

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@ARTICLE{e91-c_5_761,
author={Seung-Hyun SONG, Jae-Chul KIM, Sung-Woo JUNG, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS},
year={2008},
volume={E91-C},
number={5},
pages={761-766},
abstract={This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.},
keywords={},
doi={10.1093/ietele/e91-c.5.761},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 761
EP - 766
AU - Seung-Hyun SONG
AU - Jae-Chul KIM
AU - Sung-Woo JUNG
AU - Yoon-Ha JEONG
PY - 2008
DO - 10.1093/ietele/e91-c.5.761
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.
ER -