IEICE TRANSACTIONS on Electronics
A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Summary :
The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1025-1030
- Publication Date
- 2008/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.7.1025
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
- Category
- Novel Integration Technology
Authors
Keyword
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Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, "A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1025-1030, July 2008, doi: 10.1093/ietele/e91-c.7.1025.
Abstract: The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1025/_p
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@ARTICLE{e91-c_7_1025,
author={Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch},
year={2008},
volume={E91-C},
number={7},
pages={1025-1030},
abstract={The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.},
keywords={},
doi={10.1093/ietele/e91-c.7.1025},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
T2 - IEICE TRANSACTIONS on Electronics
SP - 1025
EP - 1030
AU - Koichi MAEZAWA
AU - Ikuo SOGA
AU - Shigeru KISHIMOTO
AU - Takashi MIZUTANI
AU - Kazuhiro AKAMATSU
PY - 2008
DO - 10.1093/ietele/e91-c.7.1025
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
ER -
English
