Development of High-Frequency GaN HFETs for Millimeter-Wave Applications

Masataka HIGASHIWAKI; Takashi MIMURA; Toshiaki MATSUI

doi:10.1093/ietele/e91-c.7.984

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications

Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI

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This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al_0.4Ga_0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.984-988

Publication Date: 2008/07/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.7.984

Type of Manuscript: Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)

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Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI, "Development of High-Frequency GaN HFETs for Millimeter-Wave Applications" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 7, pp. 984-988, July 2008, doi: 10.1093/ietele/e91-c.7.984.
Abstract: This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al_0.4Ga_0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.984/_p

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@ARTICLE{e91-c_7_984,
author={Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of High-Frequency GaN HFETs for Millimeter-Wave Applications},
year={2008},
volume={E91-C},
number={7},
pages={984-988},
abstract={This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al_0.4Ga_0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.},
keywords={},
doi={10.1093/ietele/e91-c.7.984},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 984
EP - 988
AU - Masataka HIGASHIWAKI
AU - Takashi MIMURA
AU - Toshiaki MATSUI
PY - 2008
DO - 10.1093/ietele/e91-c.7.984
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al_0.4Ga_0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.
ER -