IEICE TRANSACTIONS on Electronics
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Summary :
We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.989-993
- Publication Date
- 2008/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.7.989
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
- Category
- Nitride-based Devices
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Keyword
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Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, "Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 989-993, July 2008, doi: 10.1093/ietele/e91-c.7.989.
Abstract: We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.989/_p
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@ARTICLE{e91-c_7_989,
author={Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer},
year={2008},
volume={E91-C},
number={7},
pages={989-993},
abstract={We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
keywords={},
doi={10.1093/ietele/e91-c.7.989},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 989
EP - 993
AU - Masafumi ITO
AU - Shigeru KISHIMOTO
AU - Fumihiko NAKAMURA
AU - Takashi MIZUTANI
PY - 2008
DO - 10.1093/ietele/e91-c.7.989
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
ER -
English
